The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Mar. 03, 2010
Applicants:
Hisanori Tanaka, Anan, JP;
Yasunobu Hosokawa, Anan, JP;
Yuuki Shibutani, Anan, JP;
Inventors:
Assignee:
Nichia Corporation, Anan-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A substrate has at least one recess and/or protrusion formed in and/or on a surface thereof so as to scatter or diffract light generated in an active layer. The recess and/or protrusion is formed in such a shape that can reduce crystalline defects in semiconductor layers.
Tanaka, Hisanori. (2012). Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth (U.S. Patent No. 8119534). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8119534
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile