The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Nov. 29, 2010
Applicants:

Eun-ji Jung, Hwaseong-si, KR;

Woong-hee Sohn, Seoul, KR;

Su-kyoung Kim, Suwon-si, KR;

Gil-heyun Choi, Seoul, KR;

Byung-hee Kim, Seoul, KR;

Inventors:

Eun-ji Jung, Hwaseong-si, KR;

Woong-hee Sohn, Seoul, KR;

Su-kyoung Kim, Suwon-si, KR;

Gil-heyun Choi, Seoul, KR;

Byung-hee Kim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit the second metal simultaneously on the insulating layer and the metal layer, wherein the second metal capping layer has different thicknesses on the insulating layer and the metal layer.


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