The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 16, 2010
Applicant:
Yohei Ota, Tokyo, JP;
Inventor:
Yohei Ota, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/00 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device includes the following processes. A first groove is formed in a semiconductor substrate. An insulating film is formed in the first groove. An interlayer insulating film is formed over the semiconductor substrate. A removing process is performed to remove a part of the interlayer insulating film and a part of the insulating film to form an alignment mark in the first groove.