The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 31, 2009
Kuo Bin Huang, Jhubei, TW;
Ssu-yi LI, JhuBei Hsinchu, TW;
Ryan Chia-jen Chen, Chiayi, TW;
Chi-ming Yang, Hsian-San District, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-hsiang Lin, Hsinchu, TW;
Kuo Bin Huang, Jhubei, TW;
Ssu-Yi Li, JhuBei Hsinchu, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chi-Ming Yang, Hsian-San District, TW;
Chyi Shyuan Chern, Taipei, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure also provides another embodiment of a method for making metal gate stacks. The method includes forming a first dummy gate and a second dummy gate on a substrate; removing a polysilicon layer from the first dummy gate, resulting in a first gate trench; forming a first metal layer and a first aluminum layer in the first gate trench; applying a chemical mechanical polishing (CMP) process to the substrate; performing an annealing process to the first aluminum layer using a nitrogen and oxygen containing gas, forming an interfacial layer of aluminum, nitrogen and oxygen on the first aluminum layer; thereafter removing the polysilicon layer from the second dummy gate, resulting in a second gate trench; and forming a second metal layer and a second aluminum layer on the second metal layer in the second gate trench.