The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Sep. 28, 2007
Phillip G. Mather, Maricopa, AZ (US);
Sanjeev Aggarwal, Scottsdale, AZ (US);
Brian R. Butcher, Queen Creek, AZ (US);
Renu W. Dave, Chandler, AZ (US);
Frederick B. Mancoff, Chandler, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Phillip G. Mather, Maricopa, AZ (US);
Sanjeev Aggarwal, Scottsdale, AZ (US);
Brian R. Butcher, Queen Creek, AZ (US);
Renu W. Dave, Chandler, AZ (US);
Frederick B. Mancoff, Chandler, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Everspin Technologies, Inc., Chandler, AZ (US);
Abstract
A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also include forming a gettering layer having a composition capable of gettering oxygen, and depositing an insulating layer over the gettering layer. The process can further include exposing the insulating layer to a temperature of at least approximately 60° C. In one embodiment, after such exposure, a portion of the gettering layer is converted to an insulating material. In another embodiment, an electronic device can include a magnetic tunnel junction and an adjacent insulating layer lying within an opening in another insulating layer.