The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Mar. 18, 2009
Peter Storck, Burghausen, DE;
Martin Vorderwestner, Unterreit, DE;
Peter Storck, Burghausen, DE;
Martin Vorderwestner, Unterreit, DE;
Siltronic AG, Munich, DE;
Abstract
A multilayer semiconductor wafer has a substrate wafer having a first side and a second side; a fully or partially relaxed heteroepitaxial layer deposited on the first side of the substrate wafer; and a stress compensating layer deposited on the second side of the substrate wafer. The multilayer semiconductor wafer is produced by a method including depositing on a first side of a substrate a fully or partially relaxed heteroepitaxial layer at a deposition temperature; and at the same temperature or before significantly cooling the wafer from the deposition temperature, providing a stress compensating layer on a second side of the substrate.