The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Aug. 04, 2007
Ya-tang Yang, Santa Clara, CA (US);
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
Takako Takehara, Hayward, CA (US);
John M. White, Hayward, CA (US);
Ya-Tang Yang, Santa Clara, CA (US);
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
Takako Takehara, Hayward, CA (US);
John M. White, Hayward, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.