The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
May. 22, 2009
Joy Cheng, San Jose, CA (US);
Kafai Lai, Hopewell Junction, NY (US);
Wai-kin LI, Hopewell Junction, NY (US);
Young-hye NA, San Jose, CA (US);
Charles Rettner, San Jose, CA (US);
Daniel P. Sanders, San Jose, CA (US);
Da Yang, Hopewell Junction, NY (US);
Joy Cheng, San Jose, CA (US);
Kafai Lai, Hopewell Junction, NY (US);
Wai-Kin Li, Hopewell Junction, NY (US);
Young-Hye Na, San Jose, CA (US);
Charles Rettner, San Jose, CA (US);
Daniel P. Sanders, San Jose, CA (US);
Da Yang, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods involving the self-assembly of block copolymers are described herein, in which by beginning with openings (in one or more substrates) that have a targeted CD (critical dimension), holes are formed, in either regular arrays or arbitrary arrangements. Significantly, the percentage variation in the average diameter of the formed holes is less than the percentage variation of the average diameter of the initial openings. The formed holes (or vias) can be transferred into the underlying substrate(s), and these holes may then be backfilled with material, such as a metallic conductor. Preferred aspects of the invention enable the creation of vias with tighter pitch and better CD uniformity, even at sub-22 nm technology nodes.