The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Sep. 25, 2008
Ryo Hayashi, Yokohama, JP;
Hisato Yabuta, Machida, JP;
Yoshinori Tateishi, Yokohama, JP;
Nobuyuki Kaji, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Hisato Yabuta, Machida, JP;
Yoshinori Tateishi, Yokohama, JP;
Nobuyuki Kaji, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile