The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Jul. 20, 2009
Applicants:

Yoshiaki Sugizaki, Kanagawa-ken, JP;

Hideki Shibata, Kanagawa-ken, JP;

Masayuki Ishikawa, Kanagawa-ken, JP;

Hideo Tamura, Kanagawa-ken, JP;

Tetsuro Komatsu, Kanagawa-ken, JP;

Akihiro Kojima, Kanagawa-ken, JP;

Inventors:

Yoshiaki Sugizaki, Kanagawa-ken, JP;

Hideki Shibata, Kanagawa-ken, JP;

Masayuki Ishikawa, Kanagawa-ken, JP;

Hideo Tamura, Kanagawa-ken, JP;

Tetsuro Komatsu, Kanagawa-ken, JP;

Akihiro Kojima, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed.


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