The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Apr. 25, 2005
Applicants:

Naokatsu Sano, Sanda, JP;

Tadaaki Kaneko, Sanda, JP;

Inventors:

Naokatsu Sano, Sanda, JP;

Tadaaki Kaneko, Sanda, JP;

Assignee:

Riber, Bezons, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention provides a method for forming a selective mask on a surface of a layer of AlGaInAsPor AlGaInNAs(0≦X≦1, 0≦Y≦1, 0≦Z≦1), which is a method for forming a mask with a minute width suitable for microfabrication in nano-order. (1) An energy beamis selectively irradiated onto a natural oxide layerformed on the surface of the layerof AlGaInAsPor AlGaInNAs. (2) Of the natural oxide layer, parts other than parts onto which the energy beamhas been irradiated is removed by heating. (3) The natural oxide layerof the parts onto which the energy beamhas been irradiated is partially removed by heating while alternatively carrying out a rise and fall in heating temperature.


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