The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Dec. 13, 2005
Applicants:
Stefan Klein, Kahl am Main, DE;
Yaohua Mai, Hebei, CN;
Friedhelm Finger, Jülich, DE;
Reinhard Carius, Jülich, DE;
Inventors:
Stefan Klein, Kahl am Main, DE;
Yaohua Mai, Hebei, CN;
Friedhelm Finger, Jülich, DE;
Reinhard Carius, Jülich, DE;
Assignee:
Forschungszentrum Julich GmbH, Julich, DE;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8% absolute.