The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8110117 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 07, 2012

Filed:

Apr. 13, 2009
Applicants:

Fuchao Wang, Plano, TX (US);

Ming Fang, Plano, TX (US);

Inventors:

Fuchao Wang, Plano, TX (US);

Ming Fang, Plano, TX (US);

Assignee:

STMicroelectronics, Inc., Coppell, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method includes forming a recess in a first surface of a substrate, the recess having a width, depth, and height selected to correspond to a width, depth, and height of a fluid chamber, forming a sacrificial material in the recess, forming a first heater element, forming a metal layer overlying the first heater element, and forming a nozzle opening in the metal layer to expose the sacrificial material. The method also includes forming a path from a second surface of the substrate to expose the sacrificial material and removing the sacrificial material from the recess to expose the chamber with the selected width, depth, and height, the chamber in fluid communication with the path, the nozzle opening, and a surrounding environment.


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Wang, Fuchao. (2012). Method to form a recess for a microfluidic device (U.S. Patent No. 8110117). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8110117

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