The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Feb. 14, 2008
Adam Zhong, Milpitas, CA (US);
Wai-ming Kan, San Ramon, CA (US);
Tom Zhong, Saratoga, CA (US);
Chyu-jiuh Torng, Pleasanton, CA (US);
Adam Zhong, Milpitas, CA (US);
Wai-Ming Kan, San Ramon, CA (US);
Tom Zhong, Saratoga, CA (US);
Chyu-Jiuh Torng, Pleasanton, CA (US);
MagIC Technologies, Inc., Milpitas, CA (US);
Abstract
A process is described for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes. CMP is applied to the structure in three steps: (1) conventional CMP (2) a Highly Selective Slurry (HSS) is substituted for the conventional slurry to just expose the capping layer, and (3) the HSS is diluted and used to clean the surface as well as to cause a slight protrusion of the capping layers above the surrounding dielectric surface, making it easier the contact them without damaging the devices below.