The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
May. 28, 2008
Hoonsang Choi, Seoul, KR;
Bongjin Kuh, Suwon-si, KR;
Sunjung Kim, Suwon-si, KR;
Youngsun Kim, Suwon-si, KR;
Seunghwan Lee, Suwon-si, KR;
Sangwook Lim, Yongin-si, KR;
Chunhyung Chung, Yongin-si, KR;
Hoonsang Choi, Seoul, KR;
Bongjin Kuh, Suwon-si, KR;
Sunjung Kim, Suwon-si, KR;
Youngsun Kim, Suwon-si, KR;
Seunghwan Lee, Suwon-si, KR;
Sangwook Lim, Yongin-si, KR;
Chunhyung Chung, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonngi-do, KR;
Abstract
In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile