The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Jun. 11, 2010
Ioan Lucian Prejbeanu, Sassenage, FR;
Jean-pierre Nozieres, Le Sappey en Chartreuse, FR;
Ioan Lucian Prejbeanu, Sassenage, FR;
Jean-Pierre Nozieres, Le Sappey en Chartreuse, FR;
Crocus Technology SA, Grenoble Cedex, FR;
Abstract
A magnetic memory device of MRAM type with a thermally-assisted writing procedure, the magnetic memory device being formed from a plurality of memory cells, each memory cell comprising a magnetic tunnel junction, the magnetic tunnel junction comprising a magnetic storage layer in which data can be written in a writing process; a reference layer, having a magnetization being always substantially in the same direction at any time of the writing process; an insulating layer between the reference layer and the storage layer; wherein the magnetic tunnel junction further comprises a writing layer made of a ferrimagnetic 3d-4f amorphous alloy, and comprising a net magnetization containing a first magnetization contribution originating from the sub-lattice of 3d transition elements and a second magnetization contribution originating from the sub-lattice of 4f rare-earth elements. The magnetic memory device has a low power consumption.