The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Mar. 08, 2010
Hans-joachim Schulze, Ottobrunn, DE;
Josef Lutz, Chemnitz, DE;
Franz-josef Niedernostheide, Munster, DE;
Ralf Siemieniec, Villach, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Josef Lutz, Chemnitz, DE;
Franz-Josef Niedernostheide, Munster, DE;
Ralf Siemieniec, Villach, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile