The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2012

Filed:

Dec. 30, 2009
Applicants:

Koichi Fukuda, Yokohama, JP;

Dai Nakamura, Kawasaki-ken, JP;

Yasuhiko Matsunaga, Yokohama, JP;

Inventors:

Koichi Fukuda, Yokohama, JP;

Dai Nakamura, Kawasaki-ken, JP;

Yasuhiko Matsunaga, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device includes a semiconductor substrate; a memory cell array on the semiconductor substrate, the memory cell array comprising a plurality of memory cells capable of electrically storing data; a sense amplifier configured to detect the data stored in at least one of the memory cells; a cell source driver electrically connected to source side terminals of the memory cells and configured to supply a source potential to at least one of the source side terminals of the memory cells; a first wiring configured to electrically connect between at least one of the source side terminals of the memory cells and the cell source driver; and a second wiring formed in a same wiring layer as the first wiring, the second wiring being insulated from the first wiring and being electrically connected to the sense amplifier, wherein the first wiring and the second wiring have a plurality of through holes provided at a predetermined interval.


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