The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jun. 13, 2008
Arjun Kar-roy, Irvine, CA (US);
Arjun Kar-Roy, Irvine, CA (US);
Newport Fab, LLC, Newport Beach, CA (US);
Abstract
According to an exemplary embodiment, a liquid crystal on silicon (LCoS) structure includes a number of pixel electrodes overlying an interlayer dielectric, where diagonally adjacent pixel electrodes are separated by a gap. The LCoS structure further includes a self-planarizing passivation dielectric situated over the pixel electrodes and in the gap, where the self-planarizing passivation dielectric has a selected thickness. The self-planarizing passivation dielectric can be an Oxide-Nitride-Oxide (ONO) stack. The selected thickness of the self-planarizing passivation dielectric causes the self-planarizing passivation dielectric to have a substantially planar top surface. In one embodiment, the thickness of the self-planarizing passivation dielectric can be approximately equal to twice a width of the gap.