The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Apr. 09, 2009
Joachim Weyers, Hoehenkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Franz Hirler, Isen, DE;
Paul Kuepper, Glonn, DE;
Joachim Weyers, Hoehenkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Franz Hirler, Isen, DE;
Paul Kuepper, Glonn, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor component including a lateral transistor component is disclosed. One embodiment provides an electrically insulating carrier layer. A first and a second semiconductor layer are arranged on above another and are separated from another by a dielectric layer. The first semiconductor layer includes a polycrystalline semiconductor material, an amorphous semiconductor material or an organic semiconductor material. In the first semiconductor layer: a source zone, a body zone, a drift zone and a drain zone are provided. In the second semiconductor layer; a drift control zone is arranged adjacent to the drift zone, including a control terminal at a first lateral end for applying a control potential, and is coupled to the drain zone via a rectifying element at a second lateral end. A gate electrode is arranged adjacent to the body zone and is dielectrically insulated from the body zone by a gate dielectric layer.