The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jun. 25, 2009
Rainer Knippelmeyer, Aalen, DE;
Oliver Kienzle, Jena, DE;
Thomas Kemen, Aalen, DE;
Heiko Mueller, Heidelberg, DE;
Stephan Uhlemann, Heidelberg, DE;
Maximilian Haider, Gaiberg, DE;
Antonio Casares, Aalen, DE;
Rainer Knippelmeyer, Aalen, DE;
Oliver Kienzle, Jena, DE;
Thomas Kemen, Aalen, DE;
Heiko Mueller, Heidelberg, DE;
Stephan Uhlemann, Heidelberg, DE;
Maximilian Haider, Gaiberg, DE;
Antonio Casares, Aalen, DE;
Carl Ziess SMT AG, Oberkochen, DE;
Applied Materials Isreal Ltd, Rehovot, IL;
Abstract
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.