The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Mar. 30, 2010
Yohei Nobe, Tsuchiura, JP;
Kang-go Chung, Tsukuba, JP;
Ryuichi Saito, Tokyo, JP;
JSR Corporation, Tokyo, JP;
Abstract
A simple method of producing an organosilicon compound of a formula R(OR)Si—R—Si(OR)Ris disclosed. The method comprises the following two steps,Y—R—Y+SiXR->RXSi—R—SiXRRXSi—R—SiXR+M(OR),->R(OR)Si—R—Si(OR)RIn the formulas, Ris methylene, alkylene, or arylene, Ris alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, Ris alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.