The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Oct. 06, 2005
Applicants:
Hung-wen Wei, Hsin Chu Hsien, TW;
Hung-che Ting, Taipei, TW;
Inventors:
Hung-Wen Wei, Hsin Chu Hsien, TW;
Hung-Che Ting, Taipei, TW;
Assignee:
China Star Optoelectronics International (HK) Limited, Tsuen Wan, N. T., HK;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the plasma enhanced atomic layer deposition apparatus can switch the precursors rapidly to increase the thin film deposition rate, reduce the manufacturing gas consumption and lower the manufacturing cost.