The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Sep. 07, 2006
Chiho Kokubo, Tochigi, JP;
Aiko Shiga, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hidekazu Miyairi, Kanagawa, JP;
Koji Dairiki, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Chiho Kokubo, Tochigi, JP;
Aiko Shiga, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Hidekazu Miyairi, Kanagawa, JP;
Koji Dairiki, Kanagawa, JP;
Koichiro Tanaka, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.