The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jun. 14, 2004
Toshinori Sugihara, Kameyama, JP;
Hideo Ohno, Sendai, JP;
Masashi Kawasaki, Sendai, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Other;
Abstract
In a thin film transistor (), a gate insulating layer () is formed on a gate electrode () formed on an insulating substrate (). Formed on the gate insulating layer () is a semiconductor layer (). Formed on the semiconductor layer () are a source electrode () and a drain electrode (). A protective layer () covers them, so that the semiconductor layer () is blocked from an atmosphere. The semiconductor layer () (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.