The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Oct. 24, 2007
Hidefumi Hiura, Minato-ku, JP;
Satoru Toguchi, Minato-ku, JP;
Tetsuya Tada, Tsukuba, JP;
Toshihiko Kanayama, Tsukuba, JP;
Hidefumi Hiura, Minato-ku, JP;
Satoru Toguchi, Minato-ku, JP;
Tetsuya Tada, Tsukuba, JP;
Toshihiko Kanayama, Tsukuba, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.