The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Aug. 29, 2008
Norikazu Mizuno, Toyama, JP;
Kenji Kanayama, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Masayuki Asai, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Kenji Kanayama, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Masayuki Asai, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist pattern in a predetermined region on a substrate, depositing a thin film on the surface of the first photoresist pattern, and forming a second photoresist pattern in a region where the first photoresist pattern is not formed.