The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Sep. 30, 2010
Deok Sin Kil, Ichon-shi, KR;
Kwon Hong, Ichon-shi, KR;
Seung Jin Yeom, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium dioxide (ZrO) layer over a wafer in a predetermined thickness that does not allow continuous formation of the ZrOlayer; and forming an aluminum oxide (AlO) layer over portions of the wafer where the ZrOlayer is not formed, in a predetermined thickness that does not allow continuous formation of the AlOlayer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile