The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2012
Filed:
Jan. 22, 2011
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Yuri V. Melnik, Rockville, MD (US);
Vladimir A. Dmitriev, Gaithersburg, MD (US);
Yuri V. Melnik, Rockville, MD (US);
Freiberger Compound Materials GmbH, Freiberg/Sachsen, DE;
Abstract
Method for producing a III-N (AlN, GaN, AlGaN) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.