The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2012

Filed:

Sep. 20, 2010
Applicants:

Takayuki Tsukamoto, Kanagawa-ken, JP;

Takeshi Yamaguchi, Kanagawa-ken, JP;

Chikayoshi Kamata, Kanagawa-ken, JP;

Tsukasa Nakai, Tokyo, JP;

Takahiro Hirai, Kanagawa-ken, JP;

Shinya Aoki, Kanagawa-ken, JP;

Kohichi Kubo, Kanagawa-ken, JP;

Inventors:

Takayuki Tsukamoto, Kanagawa-ken, JP;

Takeshi Yamaguchi, Kanagawa-ken, JP;

Chikayoshi Kamata, Kanagawa-ken, JP;

Tsukasa Nakai, Tokyo, JP;

Takahiro Hirai, Kanagawa-ken, JP;

Shinya Aoki, Kanagawa-ken, JP;

Kohichi Kubo, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.


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