The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Sep. 22, 2009
Kensuke Takano, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Masaru Kito, Yokohama, JP;
Kensuke Takano, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Katsuyuki Sekine, Yokohama, JP;
Masaru Kito, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a semiconductor layer as a channel, a conductive layer which is formed on a surface of the semiconductor layer with a first insulating layer and a second insulating layer interposed therebetween and functions as a control gate electrode; and a plurality of first charge storage layers formed between the first insulating layer and the second insulating layer. The plurality of first charge storage layers are formed in isolation from one another along a surface of the first insulating layer. The first insulating layer is formed so as to protrude towards the semiconductor layer at a position where each of the first charge storage layers is formed.