The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Dec. 04, 2009
Naomu Kitano, Ichikawa, JP;
Takashi Minami, Fuchu, JP;
Motomu Kosuda, Machida, JP;
Heiji Watanabe, Suita, JP;
Naomu Kitano, Ichikawa, JP;
Takashi Minami, Fuchu, JP;
Motomu Kosuda, Machida, JP;
Heiji Watanabe, Suita, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
A first aspect of the present invention provides a semiconductor manufacturing apparatus including: a load lock chamber; a transfer chamber; and a treatment chamberand a treatment chamberwhich carry out treatment using plasma, wherein, in the treatment chamber, an exhaust means is provided with a control means for making an oxygen partial pressure into 1*10[Pa] or less. A second aspect of the present invention provides a method for forming a high dielectric constant film and a metal electrode successively, the method including the steps of: (1) depositing a metal film on a silicon oxide film or a silicon oxynitride film in the treatment chamber; (2) forming, in the treatment chamber, a high dielectric constant film by using the metal film formed in the treatment chamber; and (3) depositing, in the treatment chamberor a treatment chamberinstalled additionally, a metal electrode material on the high dielectric film formed in the treatment chamber, wherein the steps are carried out successively without being exposed to the atmosphere.