The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Apr. 27, 2006
Man Wong, Sai Kung, HK;
Hoi-sing Kwok, Kowloon, HK;
Zhiguo Meng, Sai Kung, HK;
Dongli Zhang, Kowloon, HK;
Xuejie Shi, Kowloon, HK;
Man Wong, Sai Kung, HK;
Hoi-Sing Kwok, Kowloon, HK;
Zhiguo Meng, Sai Kung, HK;
Dongli Zhang, Kowloon, HK;
Xuejie Shi, Kowloon, HK;
The Hong Kong University of Science and Technology, Hong Kong, CN;
Abstract
Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon 'islands'. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process, whilst gettering metal elements from the partially crystallized thin film. The process results in the desired polycrystalline silicon thin film.