The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2012

Filed:

Jun. 20, 2008
Applicants:

Tien-hsi Lee, Taipei, TW;

Ching-han Huang, Bade, TW;

Chao-liang Chang, Sanchong, TW;

Yao-yu Yang, Taipei, TW;

Inventors:

Tien-Hsi Lee, Taipei, TW;

Ching-Han Huang, Bade, TW;

Chao-Liang Chang, Sanchong, TW;

Yao-Yu Yang, Taipei, TW;

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.


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