The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
Oct. 30, 2008
Hiroshi Mashima, Nagasaki, JP;
Koichi Asakusa, Nagasaki, JP;
Akemi Takano, Nagasaki, JP;
Nobuki Yamashita, Nagasaki, JP;
Yoshiaki Takeuchi, Nagasaki, JP;
Hiroshi Mashima, Nagasaki, JP;
Koichi Asakusa, Nagasaki, JP;
Akemi Takano, Nagasaki, JP;
Nobuki Yamashita, Nagasaki, JP;
Yoshiaki Takeuchi, Nagasaki, JP;
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Abstract
A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.