The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2012
Filed:
May. 04, 2009
William S. Wong, San Carlos, CA (US);
Michael A. Kneissl, Berlin, DE (US);
Zhihong Yang, Sunnyvale, CA (US);
Mark Teepe, Menlo Park, CA (US);
Cliff Knollenberg, Mountain View, CA (US);
William S. Wong, San Carlos, CA (US);
Michael A. Kneissl, Berlin, DE (US);
Zhihong Yang, Sunnyvale, CA (US);
Mark Teepe, Menlo Park, CA (US);
Cliff Knollenberg, Mountain View, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.