The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jun. 11, 2010
Kyoung Lae Cho, Yongin-si, KR;
Seung-hwan Song, Incheon, KR;
Yoon Dong Park, Gyeonggi-do, KR;
Jun Jin Kong, Yongin-si, KR;
Jae Hong Kim, Seoul, KR;
Kyoung Lae Cho, Yongin-si, KR;
Seung-Hwan Song, Incheon, KR;
Yoon Dong Park, Gyeonggi-do, KR;
Jun Jin Kong, Yongin-si, KR;
Jae Hong Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.