The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Sep. 23, 2008
Hiromi Yuasa, Kanagawa-ken, JP;
Yuzo Kamiguchi, Kanagawa-ken, JP;
Masatoshi Yoshikawa, Kanagawa-ken, JP;
Katsuhiko Koui, Kanagawa-ken, JP;
Hitoshi Iwasaki, Kanagawa-ken, JP;
Tomohiko Nagata, Kanagawa-ken, JP;
Takeo Sakakubo, Kanagawa-ken, JP;
Masashi Sahashi, Kanagawa-ken, JP;
Hiromi Yuasa, Kanagawa-ken, JP;
Yuzo Kamiguchi, Kanagawa-ken, JP;
Masatoshi Yoshikawa, Kanagawa-ken, JP;
Katsuhiko Koui, Kanagawa-ken, JP;
Hitoshi Iwasaki, Kanagawa-ken, JP;
Tomohiko Nagata, Kanagawa-ken, JP;
Takeo Sakakubo, Kanagawa-ken, JP;
Masashi Sahashi, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).