The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Sep. 13, 2010
Taiko Motoi, Atsugi, JP;
Kenji Tamamori, Ebina, JP;
Shinan Wang, Kashiwa, JP;
Masahiko Okunuki, Akiruno, JP;
Haruhito Ono, Minamiashigara, JP;
Toshiaki Aiba, Fujisawa, JP;
Nobuki Yoshimatsu, Cambridge, GB;
Taiko Motoi, Atsugi, JP;
Kenji Tamamori, Ebina, JP;
Shinan Wang, Kashiwa, JP;
Masahiko Okunuki, Akiruno, JP;
Haruhito Ono, Minamiashigara, JP;
Toshiaki Aiba, Fujisawa, JP;
Nobuki Yoshimatsu, Cambridge, GB;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width.