The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Nov. 20, 2009
Katsuhiko Yamamoto, Himi, JP;
Tadashi Terasaki, Imizu, JP;
Yoshiki Yonamoto, Oyama, JP;
Hirotaka Hamamura, Kodaira, JP;
Katsuhiko Yamamoto, Himi, JP;
Tadashi Terasaki, Imizu, JP;
Yoshiki Yonamoto, Oyama, JP;
Hirotaka Hamamura, Kodaira, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.