The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Oct. 21, 2009
Bencherki Mebarki, Santa Clara, CA (US);
LI Yan Miao, San Francisco, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Jen Shu, Saratoga, CA (US);
Bencherki Mebarki, Santa Clara, CA (US);
Li Yan Miao, San Francisco, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Jen Shu, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention pertain to methods of forming patterned features on a substrate having a reduced pitch in two dimensions as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask. A spacer layer is formed over a two-dimensional square grid of cores with a thickness chosen to leave a dimple at the center of four cores on the corners of a square. The spacer layer is etched back to reveal the substrate at the centers of the square. Removing the core material results in double the pattern density of the lithographically defined grid of cores. The regions of exposed substrate may be filled again with core material and the process repeated to quadruple the pattern density.