The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Apr. 02, 2010
Applicants:
John Heck, Berkeley, CA (US);
Richard Jones, San Mateo, CA (US);
Matthew N. Sysak, Santa Barbara, CA (US);
Inventors:
John Heck, Berkeley, CA (US);
Richard Jones, San Mateo, CA (US);
Matthew N. Sysak, Santa Barbara, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
Abstract
Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes.