The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
May. 04, 2009
Go Miya, Ibaraki-ken, JP;
Manabu Edamura, Ibaraki-ken, JP;
Ken Yoshioka, Hikari, JP;
Ryoji Nishio, Kudamatsu, JP;
Go Miya, Ibaraki-ken, JP;
Manabu Edamura, Ibaraki-ken, JP;
Ken Yoshioka, Hikari, JP;
Ryoji Nishio, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided. The present invention provides a plasma etching apparatus including a processing chamberwhich performs plasma processing on an object to be processed, a first processing gas supply source, a second processing gas supply source, a first gas inlet-which introduces a processing gas into the processing chamber, second gas inlets-which introduce the processing gas into the processing chamber, flow rate regulatorsandwhich regulate the flow rate of the processing gas and a gas shuntwhich divides the first processing gas into a plurality of portions, wherein at least two gas pipes branched by the shuntare provided with the first gas inlet-or second gas inlets-and merging sections-and-are provided between the shuntand the first gas inlet-and between the shuntand the second gas inlets-for merging the second processing gas.