The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Jul. 22, 2008
Carlos Dangelo, Los Gatos, CA (US);
Ephraim Suhir, Los Altos, CA (US);
Subrata Dey, Fremont, CA (US);
Barbara Wacker, Saratoga, CA (US);
Yuan Xu, Milpitas, CA (US);
Arthur Boren, San Jose, CA (US);
Darin Olsen, Menlo Park, CA (US);
Yi Zhang, Sunnyvale, CA (US);
Peter Schwartz, Livermore, CA (US);
Bala Padmakumar, Mountain View, CA (US);
Carlos Dangelo, Los Gatos, CA (US);
Ephraim Suhir, Los Altos, CA (US);
Subrata Dey, Fremont, CA (US);
Barbara Wacker, Saratoga, CA (US);
Yuan Xu, Milpitas, CA (US);
Arthur Boren, San Jose, CA (US);
Darin Olsen, Menlo Park, CA (US);
Yi Zhang, Sunnyvale, CA (US);
Peter Schwartz, Livermore, CA (US);
Bala Padmakumar, Mountain View, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ˜1350 cmwith an intensity ID, a G peak at ˜1585 cmwith an intensity IG, and an intensity ratio I/Iof less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cmK/W or less.