The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Nov. 24, 2006
Takafumi Okudo, Nara, JP;
Yuji Suzuki, Hirakata, JP;
Yoshiyuki Takegawa, Nara, JP;
Toru Baba, Osaka, JP;
Kouji Gotou, Neyagawa, JP;
Hisakazu Miyajima, Osaka, JP;
Kazushi Kataoka, Neyagawa, JP;
Takashi Saijo, Kawanishi, JP;
Takafumi Okudo, Nara, JP;
Yuji Suzuki, Hirakata, JP;
Yoshiyuki Takegawa, Nara, JP;
Toru Baba, Osaka, JP;
Kouji Gotou, Neyagawa, JP;
Hisakazu Miyajima, Osaka, JP;
Kazushi Kataoka, Neyagawa, JP;
Takashi Saijo, Kawanishi, JP;
Panasonic Electric Works Co., Ltd., Osaka, JP;
Abstract
A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.