The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Aug. 29, 2007
Yannick Feurprier, Watervliet, NY (US);
Yannick Feurprier, Watervliet, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of patterning a film stack is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiO) layer formed on the SiCOH-containing layer, and a mask layer formed on the silicon oxide layer. A pattern is created in the mask layer. Thereafter, the pattern in the mask layer is transferred to the silicon oxide layer using a first etching process, and then the mask layer is removed. The pattern in the silicon oxide layer is transferred to the SiCOH-containing layer using a second etching process formed from a process composition comprising NF. Thereafter, the silicon oxide layer is removed using a third etching process.