The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Aug. 10, 2010
Jie Su, Santa Clara, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Yuriy Melnik, Santa Clara, CA (US);
Jie Su, Santa Clara, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Yuriy Melnik, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.