The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Mar. 13, 2009
Yi-hung LI, Kaohsiung, TW;
Jen-chuan Pan, Kaohsiung, TW;
Jongoh Kim, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A memory device and peripheral circuitry on a substrate are described, made by a process that includes forming a charge trapping structure having a first thickness over a first area. A first gate dielectric layer having a second thickness is formed for low-voltage transistors. A second gate dielectric layer having a third thickness, greater than the second thickness, is formed for high-voltage transistors. Polysilicon is deposited and patterned to define word lines and transistor gates. The thickness of the second gate dielectric layer in regions adjacent the gates, and over a source and drain regions, is reduced to a thickness that is close to that of the second thickness.