The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Dec. 20, 2007
Semyon D. Savransky, Newark, CA (US);
David L. Kencke, Beaverton, OR (US);
Ilya V. Karpov, Santa Clara, CA (US);
Semyon D. Savransky, Newark, CA (US);
David L. Kencke, Beaverton, OR (US);
Ilya V. Karpov, Santa Clara, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and electrodes in some embodiments. The use of the two different insulator layers enables embodiments where thermal losses may be reduced and an amorphous region may be maintained along the entire length of the phase change material layer.