The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Nov. 18, 2008
Khalid Radouane, Carrieres sur Seine, FR;
Khalid Radouane, Carrieres sur Seine, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A process for reducing or suppressing the appearance of watermarks in a hydrophobic surface of a semiconductor substrate prepared as a base substrate for epitaxial growth. The process includes cleaning the hydrophobic surface of the semiconductor substrate with an aqueous solution containing hydrofluoric acid (HF) and an additional acid having a pKa of less than 3, preferably hydrochloric acid (HCl), wherein the additional acid is present in the solution at a concentration by weight that is less than that of the HF; and final rinsing the cleaned hydrophobic surface of the semiconductor substrate with deionised water while subjecting the hydrophobic surface of the semiconductor substrate to megasonic waves for a time sufficient to reduce or suppress watermarks that could otherwise occur on the hydrophobic surface if the megasonic waves were not applied.